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STWA48N60M6

Name: STMicroelectronics STWA48N60M6
Brand: STMicroelectronics
SKU: 511-STWA48N60M6
Price: 9.67 USD
Availability: InStock

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Mouser No:

511-STWA48N60M6

Mfr. No:

STWA48N60M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STWA48N60M6 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STWA48N60M6

In Stock: 16

Stock:: 16 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 16 will be subject to minimum order requirements.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$9.67	$9.67
	$7.33	$73.30
	$6.11	$611.00
	$5.44	$3,264.00
	$5.09	$6,108.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	39 A
Rds On - Drain-Source Resistance:	69 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3.25 V
Qg - Gate Charge:	57 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	9.5 ns
Product Type:	MOSFETs
Rise Time:	34 ns
Series:	Mdmesh M6
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	60 ns
Typical Turn-On Delay Time:	28 ns
Unit Weight:	6 g

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Datasheet

STWA48N60M6 Datasheet (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.