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In Stock

RoHS

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GCMS020B120S1-E1

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See Product Specifications

Mouser No:

148-GCMS020B120S1-E1

Mfr. No:

GCMS020B120S1-E1

Mfr.:

SemiQ

Description:

Discrete Semiconductor Modules SiC 1200V 20mohm MOSFET & 50A SBD SOT-227

Datasheet:

GCMS020B120S1-E1 Datasheet (PDF)

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More Information

Learn more about SemiQ GCMS020B120S1-E1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	Discrete Semiconductor Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	MOSFET-SiC SBD Modules
Type:	Silicon Carbide (SiC) Module
Technology:	SiC
Vf - Forward Voltage:	1.49 V
Vgs - Gate-Source Voltage:	- 5 V, + 10 V
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	GCMS
Packaging:	Tube
Brand:	SemiQ
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	25 ns
Id - Continuous Drain Current:	113 A
Pd - Power Dissipation:	395 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	28 mOhms
Rise Time:	8 ns
Factory Pack Quantity:	30
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	4 V

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Datasheet

GCMS020B120S1-E1 Datasheet (PDF)

USHTS:: 8541100080
ECCN:: EAR99

SiC MOSFET Power Modules

SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.