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RoHS

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TSM250NB06DCR RLG

Name: Taiwan Semiconductor TSM250NB06DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TSM250NB06DCRRLG
Price: 1.7 USD
Availability: InStock

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Mouser No:

821-TSM250NB06DCRRLG

Mfr. No:

TSM250NB06DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 60V, 30A, Dual N-Channel Power MOSFET

Datasheet:

TSM250NB06DCR RLG Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor TSM250NB06DCR RLG

In Stock: 5,000

Stock:: 5,000 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.70	$1.70
	$1.08	$10.80
	$0.724	$72.40
	$0.572	$286.00
	$0.523	$523.00
Full Reel (Order in multiples of 2500)
	$0.488	$1,220.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	25 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	22 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W, 48 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	3 ns
Forward Transconductance - Min:	36 S
Product Type:	MOSFETs
Rise Time:	9 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	TSM250NB06DCR
Unit Weight:	372.608 mg

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Datasheet

TSM250NB06DCR RLG Datasheet

Models

RoHS Certificate (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.