It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD13380F3

Name: Texas Instruments CSD13380F3
Brand: Texas Instruments
SKU: 595-CSD13380F3
Price: 0.32 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD13380F3

Mfr. No:

CSD13380F3

Mfr.:

Texas Instruments

Description:

MOSFETs 12-V N channel NexF ET power MOSFET si A A 595-CSD13380F3T

Datasheet:

CSD13380F3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD13380F3

In Stock: 8,471

Stock:: 8,471

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 6,000
Factory Lead Time:: 12

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 2000

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.324	$0.32
	$0.198	$1.98
	$0.124	$12.40
	$0.092	$46.00
	$0.079	$79.00
Full Reel (Order in multiples of 3000)
	$0.079	$237.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD13380F3T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.27

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD13380F3T

Description:

MOSFETs 12-V N channel NexF ET power MOSFET si A A 595-CSD13380F3

Compare With Current Part

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	3.6 A
Rds On - Drain-Source Resistance:	76 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	550 mV
Qg - Gate Charge:	1.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.4 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	3 ns
Forward Transconductance - Min:	4.3 S
Product Type:	MOSFETs
Rise Time:	4 ns
Series:	CSD13380F3
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11 ns
Typical Turn-On Delay Time:	4 ns
Unit Weight:	0.300 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

SPICE Models

Technical Resources

CSD13380F3 TINA-TI Reference Design

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.