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CSD13385F5

Name: Texas Instruments CSD13385F5
Brand: Texas Instruments
SKU: 595-CSD13385F5
Price: 0.53 USD
Availability: InStock

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Mouser No:

595-CSD13385F5

Mfr. No:

CSD13385F5

Mfr.:

Texas Instruments

Description:

MOSFETs 12-V N channel NexF ET power MOSFET si A A 595-CSD13385F5T

Datasheet:

CSD13385F5 Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD13385F5

In Stock: 2,534

Stock:: 2,534 Can Dispatch Immediately

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Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.536	$0.54
	$0.331	$3.31
	$0.214	$21.40
	$0.159	$79.50
	$0.142	$142.00
Full Reel (Order in multiples of 3000)
	$0.123	$369.00
	$0.111	$666.00
	$0.097	$873.00
	$0.094	$2,256.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD13385F5T

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.43

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD13385F5T

Description:

MOSFETs 12-V N channel NexF ET power MOSFET si A A 595-CSD13385F5

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PICOSTAR-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	7.1 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.4 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	CN
Country of Origin:	PH
Fall Time:	10 ns
Forward Transconductance - Min:	11.3 S
Product Type:	MOSFETs
Rise Time:	10 ns
Series:	CSD13385F5
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	33 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	0.700 mg

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Technical Resources

CSD13385F5 TINA-TI Reference Design

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.