It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

CSD17301Q5A

Name: Texas Instruments CSD17301Q5A
Brand: Texas Instruments
SKU: 595-CSD17301Q5A
Price: 2.2 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

595-CSD17301Q5A

Mfr. No:

CSD17301Q5A

Mfr.:

Texas Instruments

Description:

MOSFETs 30V N Channel NexFET Pwr MOSFET

Datasheet:

CSD17301Q5A Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Texas Instruments CSD17301Q5A

In Stock: 2,322

Stock:: 2,322 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 6 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.20	$2.20
	$1.40	$14.00
	$0.956	$95.60
	$0.794	$397.00
	$0.701	$701.00
Full Reel (Order in multiples of 2500)
	$0.69	$1,725.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSONP-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	19 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.2 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	TW
Country of Origin:	CN
Fall Time:	10.5 ns
Product Type:	MOSFETs
Rise Time:	16.2 ns
Series:	CSD17301Q5A
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	100 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

CSD17301Q5A N-Channel NexFET™ Power MOSFET

The Texas Instruments CSD17301Q5A N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications and is optimized for 5V gate drive applications. The TI CSD17301Q5A NexFET Power MOSFET features ultralow Qg and Qgd along with low thermal resistance. The TI CSD17301Q5A is optimized for synchronous FET applications.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.