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CSD19532KTT

Name: Texas Instruments CSD19532KTT
Brand: Texas Instruments
SKU: 595-CSD19532KTT
Price: 3.01 USD
Availability: InStock

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Mouser No:

595-CSD19532KTT

Mfr. No:

CSD19532KTT

Mfr.:

Texas Instruments

Description:

MOSFETs CSD19532Q5B Pkg spin A 595-CSD19532KTTT A 595-CSD19532KTTT

Datasheet:

CSD19532KTT Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD19532KTT

In Stock: 1,308

Stock:: 1,308

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On Order:: 1,000
Factory Lead Time:: 6

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.01	$3.01
	$1.96	$19.60
	$1.36	$136.00
Full Reel (Order in multiples of 500)
	$1.10	$550.00
	$1.07	$1,070.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD19532KTTT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$3.80

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD19532KTTT

Description:

MOSFETs 100V N-channel NexF ET Pwr MOSFET A 595- A 595-CSD19532KTT

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	5.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.2 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	2 ns
Forward Transconductance - Min:	113 S
Moisture Sensitive:	Yes
Product Type:	MOSFETs
Rise Time:	3 ns
Series:	CSD19532KTT
Factory Pack Quantity:	500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	2.200 g

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Technical Resources

CSD19532KTT TINA-TI Reference Design

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.