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CSD87503Q3E

Name: Texas Instruments CSD87503Q3E
Brand: Texas Instruments
SKU: 595-CSD87503Q3E
Price: 1.18 USD
Availability: InStock

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Mouser No:

595-CSD87503Q3E

Mfr. No:

CSD87503Q3E

Mfr.:

Texas Instruments

Description:

MOSFETs 30-V Dual N-Channel MOSFET A 595-CSD8750 A 595-CSD87503Q3ET

Datasheet:

CSD87503Q3E Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments CSD87503Q3E

In Stock: 1,720

Stock:: 1,720 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.18	$1.18
	$0.773	$7.73
	$0.641	$64.10
	$0.617	$308.50
	$0.594	$594.00
Full Reel (Order in multiples of 2500)
	$0.581	$1,452.50

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

CSD87503Q3ET

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$1.57

Min:

Similar Product

Mfr.:

Texas Instruments

Mfr. No:

CSD87503Q3ET

Description:

MOSFETs 30-V Dual N-Channel MOSFET A 595-CSD8750 A 595-CSD87503Q3E

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	VSON-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	17.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	42.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	15.6 W
Channel Mode:	Enhancement
Tradename:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Configuration:	Dual
Country of Assembly:	CN
Country of Diffusion:	CN
Country of Origin:	CN
Fall Time:	8 ns
Forward Transconductance - Min:	24 S
Product Type:	MOSFETs
Rise Time:	40 ns
Series:	CSD87503Q3E
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	29.200 mg

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Datasheet

CSD87503Q3E Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.