LMG3526R030RQSR

Name: Texas Instruments LMG3526R030RQSR
Brand: Texas Instruments
SKU: 595-LMG3526R030RQSR
Price: 14.47 USD
Availability: OutOfStock

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Mouser No:

595-LMG3526R030RQSR

Mfr. No:

LMG3526R030RQSR

Mfr.:

Texas Instruments

Description:

Gate Drivers 650-V 30-m? GaN FET with integrated driv

Datasheet:

LMG3526R030RQSR Datasheet

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Learn more about Texas Instruments LMG3526R030RQSR

Delivery Alerts:

This product may require additional documentation to export from the United States.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 12 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 2000 Multiples: 2000

Unit Price:

$-.--

Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 2000)
	$14.47	$28,940.00
4,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
Delivery Alerts:	This product may require additional documentation to export from the United States.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	VQFN-52
Rise Time:	2.8 ns
Fall Time:	22 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	LMG3526R030
Packaging:	Reel
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Rds On - Drain-Source Resistance:	35 mOhms
Factory Pack Quantity:	2000
Subcategory:	PMIC - Power Management ICs
Technology:	GaN
Tradename:	GaN

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Datasheet

LMG3526R030RQSR Datasheet

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: 3A001.A.2.A

LMG3526R030 GaN FET with Integrated Driver

Texas Instruments LMG3526R030 GaN FET with Integrated Driver comes with protections and targets switch-mode power converters and enables designers to achieve new power density and efficiency levels. The LMG3526R030 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA than discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to control EMI and optimize switching performance actively.