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RoHS

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UCC27210D

Name: Texas Instruments UCC27210D
Brand: Texas Instruments
SKU: 595-UCC27210D
Price: 3.63 USD
Availability: InStock

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Mouser No:

595-UCC27210D

Mfr. No:

UCC27210D

Mfr.:

Texas Instruments

Description:

Gate Drivers 120V Boot 4A Peak Hi Freq Hi/Lo-Side Drv A 595-UCC27210DR

Datasheet:

UCC27210D Datasheet

ECAD Model:

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More Information

Learn more about Texas Instruments UCC27210D

In Stock: 145

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$3.63	$3.63
	$2.74	$27.40
	$2.32	$58.00
	$2.31	$173.25
	$2.14	$2,247.00
	$2.10	$6,300.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Texas Instruments
Product Category:	Gate Drivers
RoHS:
Product:	MOSFET Gate Drivers
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	4 A
Supply Voltage - Min:	8 V
Supply Voltage - Max:	17 V
Rise Time:	7.2 ns
Fall Time:	5.5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 140 C
Series:	UCC27210
Packaging:	Tube
Brand:	Texas Instruments
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Product Type:	Gate Drivers
Factory Pack Quantity:	75
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Unit Weight:	76 mg

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Datasheet

UCC27210D Datasheet

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UCC27210D Symbol & Footprint by SnapMagic

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

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CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 854239099
TARIC:: 8542399000
MXHTS:: 8542399901
ECCN:: EAR99

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.