UCC27210DDAR

Texas Instruments
595-UCC27210DDAR
UCC27210DDAR

Mfr.:

Description:
Gate Drivers 4A Peak Hi Freq High /Low-Side Driver A A 595-UCC27210DDA

ECAD Model:
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In Stock: 1,871

Stock:
1,871 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1871 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$2.76 $2.76
$2.07 $20.70
$1.89 $47.25
$1.70 $170.00
$1.60 $400.00
$1.54 $770.00
$1.51 $1,510.00
Full Reel (Order in multiples of 2500)
$1.46 $3,650.00
$1.42 $7,100.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Tube
Availability:
In Stock
Price:
$5.04
Min:
1

Similar Product

Texas Instruments UCC27210DDA
Texas Instruments
Gate Drivers 4A Peak Hi Freq High /Low-Side Driver A A 595-UCC27210DDAR

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SO-PowerPad-8
2 Driver
2 Output
4 A
8 V
17 V
7.2 ns
5.5 ns
- 40 C
+ 140 C
UCC27210
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 70.600 mg
Products found:
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Attributes selected: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.