UCC27211DDAR

Texas Instruments
595-UCC27211DDAR
UCC27211DDAR

Mfr.:

Description:
Gate Drivers 4A Peak Hi Freq High /Low-Side Driver A A 595-UCC27211DDA

Datasheet:
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Learn more about Texas Instruments UCC27211DDAR

In Stock: 526

Stock:
526
Can Dispatch Immediately
On Order:
2,305
Factory Lead Time:
6
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 100
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$2.12 $2.12
$1.58 $15.80
$1.44 $36.00
$1.29 $129.00
Full Reel (Order in multiples of 2500)
$1.29 $3,225.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
UCC27211DDA
Packaging:
Tube
Availability:
In Stock
Price:
$3.02
Min:
1

Similar Product

Texas Instruments UCC27211DDA
Texas Instruments
Gate Drivers 4A Peak,Hi Freq High/Low-Side Driver
End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.
Compare With Current Part

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
High-Side, Low-Side
SMD/SMT
SO-PowerPad-8
2 Driver
2 Output
4 A
8 V
17 V
7.2 ns
5.5 ns
- 40 C
+ 140 C
UCC27211
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: Gate Drivers
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 70.600 mg
Products found:
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Attributes selected: 0

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CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

UCC2721x High Frequency Drivers

Texas Instruments UCC2721x High-Frequency High-Side and Low-Side Drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4A source and 4A sink, and pull-up and pull-down resistance have been reduced to 0.9Ω. These performance enhancements allow for driving large power MOSFETs with minimized switching losses during the transition through the MOSFET's Miller Plateau.

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