UCC27624VDR

Texas Instruments
595-UCC27624VDR
UCC27624VDR

Mfr.:

Description:
Gate Drivers 5A/5A dual-channel g ate driver with 8V

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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Learn more about Texas Instruments UCC27624VDR

In Stock: 2,318

Stock:
2,318
Can Dispatch Immediately
On Order:
3,000
Factory Lead Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$1.12 $1.12
$0.812 $8.12
$0.734 $18.35
$0.65 $65.00
$0.609 $152.25
$0.584 $292.00
$0.563 $563.00
Full Reel (Order in multiples of 3000)
$0.538 $1,614.00
$0.527 $3,162.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Gate Drivers
SMD/SMT
SOIC-8
2 Output
9.5 V
26 V
6 ns
10 ns
- 40 C
+ 150 C
UCC27624V
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: MX
Input Voltage - Max: 26 V
Input Voltage - Min: 9.5 V
Logic Type: TTL
Maximum Turn-Off Delay Time: 27 ns
Maximum Turn-On Delay Time: 27 ns
Operating Supply Current: 300 uA
Output Voltage: 0 V to 26 V
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
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Attributes selected: 0

Datasheet

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USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

UCC27624V/UCC27624V-Q1 Dual-Channel Gate Drivers

Texas Instruments UCC27624V/UCC27624V-Q1 Dual-Channel Gate Drivers effectively drive MOSFET, IGBT, and SiC power switches. UCC27624V has a typical peak drive strength of 5A, which reduces the rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

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