GT40WR21,Q

Toshiba
757-GT40WR21Q
GT40WR21,Q

Mfr.:

Description:
IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 90

Stock:
90 Can Dispatch Immediately
Factory Lead Time:
5 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$10.80 $10.80
$7.50 $75.00
$6.74 $674.00
$6.13 $3,065.00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-3PN-3
Through Hole
Single
1.8 kV
2.9 V
- 25 V, 25 V
40 A
375 W
- 55 C
+ 175 C
GT40WR21
Tray
Brand: Toshiba
Continuous Collector Current Ic Max: 80 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: JP
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 100
Subcategory: IGBTs
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Application Notes

Product Catalogs

Test/Quality Data

This functionality requires JavaScript to be enabled.

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.