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TK6P65W,RQ

Name: Toshiba TK6P65W,RQ
Brand: Toshiba
SKU: 757-TK6P65WRQ
Price: 2.18 USD
Availability: InStock

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Mouser No:

757-TK6P65WRQ

Mfr. No:

TK6P65W,RQ

Mfr.:

Toshiba

Description:

MOSFETs Power MOSFET N-Channel

Datasheet:

TK6P65W,RQ Datasheet (PDF)

ECAD Model:

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More Information

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In Stock: 7,464

Stock:: 7,464 Can Dispatch Immediately

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Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$2.18	$2.18
	$1.40	$14.00
	$0.948	$94.80
	$0.758	$379.00
	$0.697	$697.00
Full Reel (Order in multiples of 2000)
	$0.64	$1,280.00
	$0.624	$2,496.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	5.8 A
Rds On - Drain-Source Resistance:	890 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	60 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	TK6P65W
Factory Pack Quantity:	2000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	34 ns
Unit Weight:	330 mg

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Datasheet

TK6P65W,RQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.