TLP183(GR-TPL,E

Toshiba
757-TLP183(GR-TPLE
TLP183(GR-TPL,E

Mfr.:

Description:
Transistor Output Optocouplers OPTO ISOLATOR 3.75KV TRANS 6-SO 4

ECAD Model:
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In Stock: 62,082

Stock:
62,082 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
$0.488 $0.49
$0.338 $3.38
$0.242 $24.20
$0.20 $100.00
$0.187 $187.00
Full Reel (Order in multiples of 3000)
$0.148 $444.00
$0.142 $852.00
$0.134 $1,206.00
$0.129 $3,096.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Transistor Output Optocouplers
RoHS:  
1 Channel
Reel
Cut Tape
MouseReel
Brand: Toshiba
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Product Type: Transistor Output Optocouplers
Factory Pack Quantity: 3000
Subcategory: Optocouplers
Unit Weight: 80 mg
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Attributes selected: 0

CNHTS:
8541490000
CAHTS:
8541490020
USHTS:
8541498000
JPHTS:
854149000
KRHTS:
8541409029
TARIC:
8541490000
MXHTS:
8541499900
BRHTS:
85414900
ECCN:
EAR99

Optocouplers

Toshiba Optocouplers are used for a variety of applications, ranging from industrial equipment to home appliances and equipment. This comprehensive optocoupler lineup from Toshiba consists of a module that features a high-power infrared LED coupled with a photodetector. These photocouplers are certified for major international safety standards and provide high isolation voltage, and low-power consumption. This makes them ideal for applications that require enhanced safety and environmental friendliness.

TLPxxx InGaAs Infrared LED & Photo Transistors

Toshiba's TLPxxx InGaAs Infrared LED & Photo Transistors consist of photo transistors optically coupled with InGaAs or GaAs infrared emitting diodes. They are guaranteed a wide operating temperature (Ta = -55 to 125 ̊C ) and high isolation voltage (3750Vrms). They are suitable for switching power supplies and hybrid ICs and for high-density surface mounting applications such as programmable controllers.