TRS30H120H,S1Q

Toshiba
757-TRS30H120HS1Q
TRS30H120H,S1Q

Mfr.:

Description:
SiC Schottky Diodes RECT 1.2KV 30A RDL SIC SKY

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Toshiba TRS30H120H,S1Q

In Stock: 67

Stock:
67 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$14.69 $14.69
$9.16 $91.60

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-2L
Single
83 A
1.2 kV
1.27 V
1.63 kA
2.8 uA
+ 175 C
Brand: Toshiba
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Pd - Power Dissipation: 394 W
Product Type: SiC Schottky Diodes
Subcategory: Diodes & Rectifiers
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Attributes selected: 0

Datasheet

CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

SiC Schottky Barrier Diodes

Toshiba SiC Schottky Barrier Diodes (SBDs) feature high reverse voltage ratings and short reverse recovery time (trr). Toshiba also provides 650V SBDs with a junction barrier Schottky (JBS) structure for low leakage current (Ir) and high surge current capability. These devices improve the efficiency of switched-mode power supplies.

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