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TW015Z65C,S1F

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See Product Specifications

Mouser No:

757-TW015Z65CS1F

Mfr. No:

TW015Z65C,S1F

Mfr.:

Toshiba

Description:

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm

Datasheet:

TW015Z65C,S1F Datasheet (PDF)

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Learn more about Toshiba TW015Z65C,S1F

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	SiC MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	15 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	128 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	342 W
Channel Mode:	Enhancement
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	23 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	19 ns
Series:	3rd Generation
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	59 ns
Typical Turn-On Delay Time:	40 ns

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Datasheet

TW015Z65C,S1F Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

3rd Generation Silicon Carbide MOSFETs

Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (C_ISS) of 4850pF (typical), a low gate-input charge (Q_g) of 128nC (typical), and a drain-to-source On-resistance (R_DS(ON)) of just 15mΩ or 30mΩ (typical).