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IRFR320TRPBF-BE3

Name: Vishay IRFR320TRPBF-BE3
Brand: Vishay Semiconductors
SKU: 78-IRFR320TRPBF-BE3
Price: 2.4 USD
Availability: InStock

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Mouser No:

78-IRFR320TRPBF-BE3

Mfr. No:

IRFR320TRPBF-BE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 400V 3.1A N-CH MOSFET

Datasheet:

IRFR320TRPBF-BE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay Semiconductors IRFR320TRPBF-BE3

In Stock: 24,475

Stock:: 24,475 Can Dispatch Immediately

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$2.40	$2.40
	$1.54	$15.40
	$1.06	$106.00
	$0.847	$423.50
	$0.838	$838.00
Full Reel (Order in multiples of 2000)
	$0.794	$1,588.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Id - Continuous Drain Current:	3.1 A
Rds On - Drain-Source Resistance:	1.8 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	42 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	13 ns
Forward Transconductance - Min:	1.7 S
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	10 ns

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Technical Resources

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.