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SIRA84BDP-T1-GE3

Name: Vishay SIRA84BDP-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIRA84BDP-T1-GE3
Price: 1.2 USD
Availability: InStock

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Mouser No:

78-SIRA84BDP-T1-GE3

Mfr. No:

SIRA84BDP-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAKSO8 N-CH 30V 22A

Datasheet:

SIRA84BDP-T1-GE3 Datasheet

ECAD Model:

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Learn more about Vishay / Siliconix SIRA84BDP-T1-GE3

In Stock: 8,338

Stock:: 8,338 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.20	$1.20
	$0.847	$8.47
	$0.528	$52.80
	$0.363	$181.50
	$0.306	$306.00
Full Reel (Order in multiples of 3000)
	$0.274	$822.00
	$0.236	$1,416.00
	$0.20	$1,800.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	7.1 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	20.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	36 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	10 ns
Unit Weight:	506.600 mg

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Datasheet

SIRA84BDP-T1-GE3 Datasheet

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET^® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK^® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low R_DS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK^® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.