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C3M0350120J

Name: Wolfspeed C3M0350120J
Brand: Wolfspeed
SKU: 941-C3M0350120J
Price: 5.71 USD
Availability: InStock

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Mouser No:

941-C3M0350120J

Mfr. No:

C3M0350120J

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-263-7, Industrial

Datasheet:

C3M0350120J Datasheet

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In Stock: 117

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$5.71	$5.71
	$3.02	$30.20
	$2.76	$276.00
	$2.31	$1,155.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	7.2 A
Rds On - Drain-Source Resistance:	455 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	13 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40.8 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	11 ns
Forward Transconductance - Min:	2.9 S
Moisture Sensitive:	Yes
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	7 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	9 ns
Typical Turn-On Delay Time:	6 ns
Unit Weight:	2.387 g

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Datasheet

C3M0350120J Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V Silicon Carbide Power MOSFETs

Wolfspeed 1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.