CAB530M12BM3

Wolfspeed
941-CAB530M12BM3
CAB530M12BM3

Mfr.:

Description:
Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Industrial

Datasheet:
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In Stock: 2

Stock:
2 Can Dispatch Immediately
Factory Lead Time:
11 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$671.49 $671.49
$590.36 $5,903.60

Product Attribute Attribute Value Select Attribute
Wolfspeed
Product Category: Discrete Semiconductor Modules
RoHS: N
SiC Modules
Half Bridge
SiC
1.2 kV
- 4 V, + 15 V
Screw Mount
Module
- 40 C
+ 175 C
Brand: Wolfspeed
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Id - Continuous Drain Current: 530 A
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 2.67 mOhms
Factory Pack Quantity: 1
Subcategory: Discrete Semiconductor Modules
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 3.6 V
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CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

62mm Silicon Carbide Half-Bridge Modules

Wolfspeed 1200V and 1700V 62mm Silicon Carbide (SiC) Half-Bridge Modules combine the system benefits of SiC with a robust and low-inductance layout. The half-bridge modules feature increased system efficiency due to SiC's low switching and conduction losses. These power modules include a low-inductance internal layout, enabling maximum voltage utilization with minimal overshoot and ringing. The half-bridge modules are chosen from aluminum nitride ceramic for reduced thermal resistance with robust CTE matching and silicon nitride ceramic for sustained maximum junction temperature operation.

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