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RoHS

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CBB032M12FM3

Name: Wolfspeed CBB032M12FM3
Brand: Wolfspeed
SKU: 941-CBB032M12FM3
Price: 88.09 USD
Availability: InStock

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Mouser No:

941-CBB032M12FM3

Mfr. No:

CBB032M12FM3

Mfr.:

Wolfspeed

Description:

Discrete Semiconductor Modules 1200V, 50A, SiC Six pack Module GEN 3

Datasheet:

CBB032M12FM3 Datasheet

ECAD Model:

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Learn more about Wolfspeed CBB032M12FM3

In Stock: 80

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$88.09	$88.09
	$74.53	$745.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	Discrete Semiconductor Modules
RoHS:
Product:	SiC Modules
Type:	Full Bridge
Technology:	SiC
Vf - Forward Voltage:	5.5 V
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Mounting Style:	Screw Mount
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Series:	WolfPACK
Packaging:	Tray
Brand:	Wolfspeed
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Id - Continuous Drain Current:	37 A
Pd - Power Dissipation:	10 mW
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	32 mOhms
Factory Pack Quantity:	18
Subcategory:	Discrete Semiconductor Modules
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs th - Gate-Source Threshold Voltage:	2.5 V

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Datasheet

CBB032M12FM3 Datasheet

PCN

Product Change Notification (PDF)

CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

WolfPACK™ SiC-Based Power Modules

Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than is achievable with either multiple discrete devices or with larger, high-ampacity modules.