It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

E3M0032120J2-TR

Name: Wolfspeed E3M0032120J2-TR
Brand: Wolfspeed
SKU: 941-E3M0032120J2-TR
Price: 13.18 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

941-E3M0032120J2-TR

Mfr. No:

E3M0032120J2-TR

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 32mO, 1200V, TO-263-7 XL T&R, Automotive, Gen3

Datasheet:

E3M0032120J2-TR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Wolfspeed E3M0032120J2-TR

In Stock: 713

Stock:: 713 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 713 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$13.18	$13.18
	$9.24	$92.40
	$8.19	$819.00
	$6.97	$3,485.00
Full Reel (Order in multiples of 800)
	$6.97	$5,576.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	74 A
Rds On - Drain-Source Resistance:	55 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	108 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	341 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	8 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	19 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	14 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

E3M0032120J2-TR Datasheet (PDF)

PCN

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

E-Series Automotive Silicon Carbide Power MOSFETs

Wolfspeed E-Series Automotive Silicon Carbide Power MOSFETs are automotive qualified, PPAP capable, N-channel enhancement mode and humidity-resistant MOSFETs. The components offer low switching losses and a high figure of merit and are optimised for use in EV HVAC motor drives, EV onboard chargers and high-voltage DC-DC converters.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.