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E4MS025120U2-TR

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See Product Specifications

Mouser No:

941-E4MS025120U2-TR

Mfr. No:

E4MS025120U2-TR

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET,25mO,1200V, TSC (U2) , Automotive, Gen4

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

E4MS025120U2-TR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Wolfspeed E4MS025120U2-TR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7XL
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	82 A
Rds On - Drain-Source Resistance:	33 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	125 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	350 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	11 ns
Forward Transconductance - Min:	28 S
Packaging:	Reel
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	4 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	12 ns

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Datasheet

E4MS025120U2-TR Datasheet (PDF)

USHTS:: 8541290095
ECCN:: EAR99

1200V E4MS Discrete SiC MOSFETs

Wolfspeed 1200V E4MS Discrete Silicon Carbide (SiC) MOSFETs deliver unparalleled performance in onboard automotive applications. The E4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for engineers to tune and optimize the performance in the application. The E4MS family provides improved E_on, E_RR, and E_off losses compared to the E3M family of devices, while maintaining a low R_DS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies.