IS15M7R1S1C

iDEAL Semiconductor
25-IS15M7R1S1C
IS15M7R1S1C

Mfr.:

Description:
MOSFETs 150 Volt N-Channel Power MOSFET 6.4 mOhm PDFN 5x6mm

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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More Information
Learn more about iDEAL Semiconductor IS15M7R1S1C

In Stock: 4,622

Stock:
4,622
Can Dispatch Immediately
On Order:
5,000
Factory Lead Time:
12
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (USD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
$4.73 $4.73
$3.51 $35.10
$2.73 $273.00
Full Reel (Order in multiples of 5000)
$2.32 $11,600.00
† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
IS15M7R1S1C-7SR
Packaging:
Cut Tape
Availability:
In Stock
Price:
$4.81
Min:
1

Product Attribute Attribute Value Select Attribute
iDEAL Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PDFN-8
N-Channel
1 Channel
150 V
133 A
6.4 mOhms
- 20 V, 20 V
3.3 V
48 nC
- 55 C
+ 175 C
250 W
Enhancement
iDEAL Semiconductor
Reel
Cut Tape
MouseReel
Brand: iDEAL Semiconductor
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 8.4 ns
Forward Transconductance - Min: 41 S
Product Type: MOSFETs
Rise Time: 1.7 ns
Series: 150V
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 8.5 ns
Unit Weight: 117.660 mg
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Attributes selected: 0

Datasheet

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs

iDEAL Semiconductor iS15M7R1S1C SuperQ™ 150V N-Channel Power MOSFETs are high-performance MOSFETs designed to deliver superior efficiency and switching performance in demanding power applications. Built using iDEAL Semiconductor’s proprietary SuperQ™ technology, the iS15M7R1S1C devices offer an exceptionally low RDS(on) of 6.4mΩ and a total gate charge (Qg) of just 63nC (maximum), enabling faster switching speeds and reduced conduction losses. These MOSFETs support a drain current up to 133A and are housed in a compact PDFN 5mm x 6mm package, making the devices ideal for space-constrained designs. With a low gate threshold voltage and robust avalanche energy handling, the iS15M7R1S1C MOSFETs are well-suited for applications such as boost converters, switch-mode power supply (SMPS) control FETs, secondary side synchronous rectifiers, and motor control, where high efficiency and thermal performance are critical.

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