It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

FFSB20120A

Name: onsemi FFSB20120A
Brand: onsemi
SKU: 863-FFSB20120A
Price: 8.71 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-FFSB20120A

Mfr. No:

FFSB20120A

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC TO263 SBD 20A 1 200V

Datasheet:

FFSB20120A Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi FFSB20120A

In Stock: 525

Stock:: 525 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$8.71	$8.71
	$5.98	$59.80
	$4.77	$477.00
	$4.46	$2,230.00
Full Reel (Order in multiples of 800)
	$4.46	$3,568.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3
Configuration:	Single
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.45 V
Ifsm - Forward Surge Current:	135 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSB20120A
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Pd - Power Dissipation:	333 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	800
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	1.2 kV

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FFSB20120A Datasheet

EOL

PCN

Material Composition Disclosure

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

Energy Storage Solutions

onsemi Energy Storage Systems (ESS) store electricity from various power sources, like coal, nuclear, wind, and solar, in different forms, including batteries (electrochemical), compressed air (mechanical), and molten salt (thermal). This solution focuses on battery energy storage systems connected to solar inverter systems.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.