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FFSM0665A

Name: onsemi FFSM0665A
Brand: onsemi
SKU: 863-FFSM0665A
Price: 3.92 USD
Availability: InStock

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Mouser No:

863-FFSM0665A

Mfr. No:

FFSM0665A

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V 6A SIC SBD

Datasheet:

FFSM0665A Datasheet

ECAD Model:

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More Information

Learn more about onsemi FFSM0665A

In Stock: 3,123

Stock:: 3,123 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 3123 will be subject to minimum order requirements.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$3.92	$3.92
	$1.84	$18.40
	$1.66	$166.00
Full Reel (Order in multiples of 3000)
	$1.66	$4,980.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	SMD/SMT
Package/Case:	PQFN-8x8
Configuration:	Single
If - Forward Current:	6 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	42 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSM0665A
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Pd - Power Dissipation:	56 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	3000
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	155.848 mg

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Datasheet

FFSM0665A Datasheet

PCN

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.