MICROFJ-40035-TSV-TR1

onsemi
863-MFJ40035TSVTR1
MICROFJ-40035-TSV-TR1

Mfr.:

Description:
Photodiodes J-SERIES 4MM 35U TSV

Datasheet:
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Learn more about onsemi MICROFJ-40035-TSV-TR1

In Stock: 5

Stock:
5
Can Dispatch Immediately
On Order:
7
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$65.79 $65.79
$59.66 $596.60
$57.17 $5,717.00
500 Quote

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Photodiodes
RoHS:  
Photodiode Arrays
SMD/SMT
420 nm
3 uA
110 ps
- 40 C
+ 85 C
J-Series SIPM
Brand: onsemi
Country of Assembly: TH
Country of Diffusion: JP
Country of Origin: TH
Moisture Sensitive: Yes
Packaging: Cut Tape
Product Type: Photodiodes
Factory Pack Quantity: 1
Subcategory: Optical Detectors & Sensors
Tradename: SensL
Part # Aliases: MICROFJ-40035-TSV-TA
Unit Weight: 2.117 g
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Attributes selected: 0

CNHTS:
8541490000
USHTS:
8541491050
ECCN:
EAR99

J-Series Silicon Photomultiplier (SiPM) Sensors

onsemi J-Series Silicon Photomultiplier (SiPM) Sensors have been optimised for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and their sensitivity extends down into the UV region. These sensors feature industry-leading low dark count rates of 50kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process, they feature an exceptional breakdown voltage uniformity of ±250mV. The J-Series sensors are available in 3mm, 4mm and 6mm sizes packaged in a TSV chip scale package that is compatible with industry standard, lead-free, reflow soldering processes. J-Series sensors also feature onsemi's unique fast output for fast timing capability.

Silicon Photomultipliers (SiPMs)

onsemi Silicon Photomultipliers (SiPMs) feature high gain, fast timing, and excellent PDE with practical advantages associated with solid state technology (SST). These onsemi SiPMs offer a fast output terminal and are manufactured using a CMOS process. The SiPMs have a breakdown voltage uniformity of ±250mV across all sensors in a product line, a low-temperature coefficient of 21mV/°C, and <30V bias voltage. These SiPMs are ideal for medical imaging, hazard and threat, 3D ranging and imaging, and high energy physics.

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