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NSS40300DDR2G

Name: onsemi NSS40300DDR2G
Brand: onsemi
SKU: 863-NSS40300DDR2G
Price: 1.27 USD
Availability: InStock

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Mouser No:

863-NSS40300DDR2G

Mfr. No:

NSS40300DDR2G

Mfr.:

onsemi

Description:

Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP

Datasheet:

NSS40300DDR2G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NSS40300DDR2G

In Stock: 2,847

Stock:: 2,847 Can Dispatch Immediately

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Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$1.27	$1.27
	$0.666	$6.66
	$0.491	$49.10
	$0.407	$203.50
	$0.362	$362.00
Full Reel (Order in multiples of 2500)
	$0.326	$815.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

NSS40201LT1G

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$0.55

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Transistor Polarity:	PNP
Configuration:	Dual
Maximum DC Collector Current:	3 A
Collector- Emitter Voltage VCEO Max:	40 V
Collector- Base Voltage VCBO:	40 V
Emitter- Base Voltage VEBO:	7 V
Collector-Emitter Saturation Voltage:	135 mV
Pd - Power Dissipation:	783 mW
Gain Bandwidth Product fT:	100 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	NSS40300DD
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Continuous Collector Current:	- 3 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
DC Collector/Base Gain hFE Min:	250
DC Current Gain hFE Max:	250 at 10 mA, 2 V
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2500
Subcategory:	Transistors
Unit Weight:	143 mg

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Datasheet

NSS40300DDR2G Datasheet

PCN

SPICE Models

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 8542330299
ECCN:: EAR99

e2PowerEdge Low VCE(sat) Transistors

onsemi e2PowerEdge Low V_CE(sat) Transistors are miniature surface mount devices featuring ultra-low saturation voltage (V_CE(sat)) and high current gain capability. These are designed for low-voltage, high-speed switching applications where affordable, efficient energy control is essential. Typical applications are DC−DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players. Other applications are low-voltage motor controls in mass storage products such as disc and tape drives. These can be used for airbag deployment and instrument clusters in the automotive industry. The high current gain allows onsemi e2PowerEdge devices to be driven directly from PMU’s control outputs, and the linear gain (Beta) makes them ideal components in analog amplifiers.