It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

NVMFS6H800NWFT1G

Name: onsemi NVMFS6H800NWFT1G
Brand: onsemi
SKU: 863-NVMFS6H800NWFT1G
Price: 4.88 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVMFS6H800NWFT1G

Mfr. No:

NVMFS6H800NWFT1G

Mfr.:

onsemi

Description:

MOSFETs TRENCH 8 80V NFET

Datasheet:

NVMFS6H800NWFT1G Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMFS6H800NWFT1G

In Stock: 107

Stock:: 107 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 30 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$4.88	$4.88
	$3.40	$34.00
	$2.43	$243.00
	$2.34	$1,170.00
	$2.19	$2,190.00
Full Reel (Order in multiples of 1500)
	$2.19	$3,285.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	203 A
Rds On - Drain-Source Resistance:	2.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	85 ns
Forward Transconductance - Min:	138 S
Product Type:	MOSFETs
Rise Time:	89 ns
Series:	NVMFS6H800N
Factory Pack Quantity:	1500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	97 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	750 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMFS6H800NWFT1G Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).