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DMN53D0LW-7

Name: Diodes Incorporated DMN53D0LW-7
Brand: Diodes Incorporated
SKU: 621-DMN53D0LW-7
Price: 0.22 USD
Availability: InStock

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Mouser No:

621-DMN53D0LW-7

Mfr. No:

DMN53D0LW-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56p

Datasheet:

DMN53D0LW-7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMN53D0LW-7

In Stock: 31,574

Stock:: 31,574 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 6000

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.22	$0.22
	$0.137	$1.37
	$0.086	$8.60
	$0.063	$31.50
	$0.056	$56.00
Full Reel (Order in multiples of 3000)
	$0.044	$132.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

DMN53D0LW-13

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

$0.32

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-323-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	50 V
Id - Continuous Drain Current:	360 mA
Rds On - Drain-Source Resistance:	2 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Qg - Gate Charge:	1.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	420 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	11 ns
Forward Transconductance - Min:	80 mS
Product Type:	MOSFETs
Rise Time:	2.5 ns
Series:	DMN53
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.9 ns
Typical Turn-On Delay Time:	2.7 ns
Unit Weight:	6 mg

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Datasheet

DMN53D0LW-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

DMN53xx N-Channel Enhancement Mode MOSFETs

Diodes Incorporated DMN53xx N-Channel Enhancement Mode MOSFETs are designed to minimize the on-state resistance RDS(ON) while maintaining superior switching performance. ESD protected to 2KV, these new generation MOSFETs feature low on-resistance, very low gate threshold voltage, low input capacitance, fast switching speeds, and low input/output leakage. Qualified to AEC-Q101 Standards for High Reliability, DMN53xx N-Channel Enhancement Mode MOSFETs are ideal for high-efficiency power management applications.

DMNxx MOSFETs

Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.