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DXTN80100CFGQ-7

Name: Diodes Incorporated DXTN80100CFGQ-7
Brand: Diodes Incorporated
SKU: 621-DXTN80100CFGQ-7
Price: 0.48 USD
Availability: InStock

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Mouser No:

621-DXTN80100CFGQ-7

Mfr. No:

DXTN80100CFGQ-7

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

DXTN80100CFGQ-7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DXTN80100CFGQ-7

In Stock: 1,791

Stock:: 1,791 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$0.488	$0.49
	$0.304	$3.04
	$0.246	$24.60
	$0.234	$117.00
	$0.224	$224.00
Full Reel (Order in multiples of 2000)
	$0.213	$426.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerVDFN-8
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	100 V
Collector- Base Voltage VCBO:	150 V
Emitter- Base Voltage VEBO:	8 V
Collector-Emitter Saturation Voltage:	130 mV
Pd - Power Dissipation:	2.4 W
Gain Bandwidth Product fT:	125 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Series:	DXTN
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	5.5 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Current Gain hFE Max:	420 at 100 mA
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2000
Subcategory:	Transistors

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Datasheet

DXTN80100CFGQ-7 Datasheet (PDF)

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USHTS:: 8541290095
TARIC:: 8541210000
ECCN:: EAR99

DXTN80x NPN Bipolar Transistors

Diodes Incorporated DXTN80x NPN Bipolar Transistors offer a small form factor, thermally efficient PowerDI^® 3333-8 package, allowing higher-density end products. The devices supply a >30V, 60V, or 100V collector-emitter voltage and a >8V emitter-base voltage. The DXTN80x is ideal for high-temperature environments, with a temperature rating of +175°C. The Diodes Inc. DXTN80x NPN bipolar transistors are excellent for motors, solenoids, relays, and actuator driver controls.

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Diodes Incorporated DXTN/P 78Q and 80Q Bipolar Transistors offer 30V, 60V, and 100V ratings, deliver exceptional conduction efficiency and thermal performance for demanding automotive power switching and control. The ultra-low V_CE(SAT) NPN and PNP bipolar transistors are ideal for 12V, 24V, and 48V systems, supporting applications such as MOSFET and IGBT gate driving, load switching, LDO regulation, DC-DC conversion, and motor/actuator control.