It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IKQ75N120CH7XKSA1

Name: Infineon IKQ75N120CH7XKSA1
Brand: Infineon Technologies
SKU: 726-IKQ75N120CH7XKSA
Price: 8.32 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IKQ75N120CH7XKSA

Mfr. No:

IKQ75N120CH7XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package

Datasheet:

IKQ75N120CH7XKSA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IKQ75N120CH7XKSA1

In Stock: 288

Stock:: 288 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 26 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$8.32	$8.32
	$5.79	$57.90
	$5.17	$517.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Series:	IGBT7 H7
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKQ75N120CH7 SP005578282

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IKQ75N120CH7XKSA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

1200V TRENCHSTOP IGBT7 H7 Discrete Transistors

Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7^th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.