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RoHS

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NGTB25N120FL3WG

Name: onsemi NGTB25N120FL3WG
Brand: onsemi
SKU: 863-NGTB25N120FL3WG
Price: 7.2 USD
Availability: InStock

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Mouser No:

863-NGTB25N120FL3WG

Mfr. No:

NGTB25N120FL3WG

Mfr.:

onsemi

Description:

IGBTs IGBT 1200V 25A FS3 SOLAR/UPS

Datasheet:

NGTB25N120FL3WG Datasheet

ECAD Model:

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In Stock: 129

Stock:: 129 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$7.20	$7.20
	$4.20	$42.00
	$3.52	$422.40
	$3.51	$1,895.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.7 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	349 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	NGTB25N120FL3
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	VN
Country of Diffusion:	CZ
Country of Origin:	VN
Gate-Emitter Leakage Current:	200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs
Unit Weight:	4.083 g

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Datasheet

NGTB25N120FL3WG Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

NGTB25N/NGTB40N Isolated Gate Bipolar Transistors

onsemi NGTB25N and NGTB40N Isolated Gate Bipolar Transistors (IGBT) feature a robust and cost-effective Ultra Field Stop Trench construction. Low switch losses and an ultra-fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these onsemi devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.