It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVTFS6H888NLTAG

Name: onsemi NVTFS6H888NLTAG
Brand: onsemi
SKU: 863-NVTFS6H888NLTAG
Price: 1.01 USD
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVTFS6H888NLTAG

Mfr. No:

NVTFS6H888NLTAG

Mfr.:

onsemi

Description:

MOSFETs T8 80V LL U8FL

Datasheet:

NVTFS6H888NLTAG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVTFS6H888NLTAG

In Stock: 4,329

Stock:: 4,329 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.01	$1.01
	$0.631	$6.31
	$0.413	$41.30
	$0.319	$159.50
	$0.294	$294.00
Full Reel (Order in multiples of 1500)
	$0.273	$409.50

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WDFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	14 A
Rds On - Drain-Source Resistance:	50 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	23 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Product Type:	MOSFETs
Series:	NVTFS6H888NL
Factory Pack Quantity:	1500
Subcategory:	Transistors

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVTFS6H888NLTAG Datasheet

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).

NVMFS6H824NLT1G & NVTFS6H888NLTAG Power MOSFETs

onsemi NVMFS6H824NLT1G and NVTFS6H888NLTAG MOSFETs Automotive Power MOSFETs are AEC-Q101 qualified and come in a small footprint flat lead DFN5 package for compact designs. These onsemi devices offer low Q_G and capacitance to minimize driver losses and low R_DS(on) to reduce conduction losses. Wettable flank options (NVMFS6H824NLWF and NVTFS6H888NLWF in a WDFN8 package) provide enhanced optical inspection. Typical applications include switching power supplies, motor control, power switches (high-/low-side drivers and H-bridges), 48V systems, DC/DC converters, and load switches.