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SSM6K514NU,LF

Name: Toshiba SSM6K514NU,LF
Brand: Toshiba
SKU: 757-SSM6K514NULF
Price: 0.68 USD
Availability: OutOfStock

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Mouser No:

757-SSM6K514NULF

Mfr. No:

SSM6K514NU,LF

Mfr.:

Toshiba

Description:

MOSFETs Small Low ON Resistane MOSFETs

Datasheet:

SSM6K514NU,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6K514NU,LF

Availability

Stock:: 0

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On Order:: 3,000
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+$7.00)

Pricing (USD)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	$0.688	$0.69
	$0.423	$4.23
	$0.278	$27.80
	$0.211	$105.50
	$0.188	$188.00
Full Reel (Order in multiples of 3000)
	$0.158	$474.00
	$0.144	$864.00
	$0.141	$1,269.00

† A MouseReel™ fee of $7.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	UDFN-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	8.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.4 V
Qg - Gate Charge:	7.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.25 W
Channel Mode:	Enhancement
Tradename:	U-MOSIX-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TH
Forward Transconductance - Min:	6.8 S
Product Type:	MOSFETs
Series:	SSM6K
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	8.500 mg

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Datasheet

SSM6K514NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

USB Type-C™ Data Mux & Power Delivery Switches

Toshiba USB Type-C™ Data Mux and Power Delivery Switches support new features and new technology in mobile applications. Devices are charged with USB Power Delivery systems with higher charging voltages than before. For example, a 100W charging system delivers 20V/5A and would require a 30V-tolerant switch. Toshiba provides low-resistance 30V switches, including MOSFETs and IC switches, that provide overvoltage protection and slew rate control.

Discrete Thermostat Solution

Toshiba Discrete Thermostat Solution provides improved reliability and performance in a smaller footprint. The accelerating demand for energy-efficient solutions and a surge in the number of smart home devices will encourage significant growth for smart thermostats. Efficient energy savings, smart controlling, and reduction in per unit energy cost are some underlining parameters that will guide the industry moving forward. It’s essential to reduce power consumption and space requirements and improve operating life to increase the functionality and performance of these devices. Toshiba offers products that meet these critical requirements with the current LDO technologies and photo relays, which have garnered much success in thermostats and other similar designs.

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, and flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. The MOSFETs feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. Toshiba U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.