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TK1K9A60F,S4X

Name: Toshiba TK1K9A60F,S4X
Brand: Toshiba
SKU: 757-TK1K9A60FS4X
Price: 1.53 USD
Availability: OutOfStock

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Mouser No:

757-TK1K9A60FS4X

Mfr. No:

TK1K9A60F,S4X

Mfr.:

Toshiba

Description:

MOSFETs N-Ch TT-MOSIX 600V 30W 490pF 3.7A

Datasheet:

TK1K9A60F,S4X Datasheet (PDF)

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Learn more about Toshiba TK1K9A60F,S4X

Availability

Stock:: 0

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On Order:: 350
Factory Lead Time:: 17

Weeks Estimated factory production time.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$1.53	$1.53
	$0.627	$6.27
	$0.537	$53.70
	$0.45	$225.00
	$0.441	$441.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	3.7 A
Rds On - Drain-Source Resistance:	1.9 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	14 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Tradename:	MOSIX
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	15 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	TK1K9A60F
Factory Pack Quantity:	50
Subcategory:	Transistors
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	32 ns
Unit Weight:	2 g

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Datasheet

TK1K9A60F,S4X Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Tests Report

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

π-MOS IX Planar Power MOSFETs

Toshiba π-MOS IX Planar Power MOSFETs offer high-efficiency and low noise in a compact TO-220SIS package. π-MOS IX MOSFETs provide optimal performance due to the double-diffused process design adjustment. With an optimized chip design, the π-MOS IX components provide 5dB lower peak EMI noise than the previous π-MOS VII series, while maintaining the same efficiency level. These N-channel power MOSFETs offer high design flexibility, reducing workloads. In addition, the π-MOS IX series provides the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFETs.