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RoHS

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IPTC007N06NM5ATMA1

Name: Infineon IPTC007N06NM5ATMA1
Brand: Infineon Technologies
SKU: 726-TC007N06NM5ATMA1
Price: 6.91 USD
Availability: OutOfStock

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Mouser No:

726-TC007N06NM5ATMA1

Mfr. No:

IPTC007N06NM5ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs IFX FET 60V

Datasheet:

IPTC007N06NM5ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IPTC007N06NM5ATMA1

Availability

Stock:: 0

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (USD)

Qty.	Unit Price	Ext. Price
	$6.91	$6.91
	$4.68	$46.80
	$3.47	$347.00
	$3.37	$1,685.00
	$3.14	$3,140.00
Full Reel (Order in multiples of 1800)
	$3.14	$5,652.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HDSOP-16
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	454 A
Rds On - Drain-Source Resistance:	750 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	209 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Fall Time:	22 ns
Forward Transconductance - Min:	330 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	IPTC007N06
Factory Pack Quantity:	1800
Subcategory:	Transistors
Typical Turn-Off Delay Time:	76 ns
Typical Turn-On Delay Time:	38 ns
Part # Aliases:	IPTC007N06NM5 SP005753483

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Datasheet

IPTC007N06NM5ATMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
Learn More