STMicroelectronics SuperMESH MOSFETs

Results: 169
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
STMicroelectronics MOSFETs N-CHANNEL 950 V 1.1 7.2 A TO-220 Lead-Time 15 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 7.2 A 1.35 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 35 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Channel 1000V Zener SuperMESH Lead-Time 15 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 2 A 8.5 Ohms - 30 V, 30 V 3 V 16 nC - 55 C + 150 C 70 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 800V 0.76 Ohm 6 A MDmesh K5 Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch 450V 3.2 Ohm 1.8A SuperMESH 3 Non-Stocked Lead-Time 15 Weeks
Min.: 3,000
Mult.: 3,000

Si Through Hole TO-251-3 N-Channel 1 Channel 450 V 1.8 A 3.8 Ohms - 30 V, 30 V 3 V 6 nC - 55 C + 150 C 27 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs POWER MOSFET N-CH 950V 4 A Non-Stocked Lead-Time 15 Weeks
Min.: 3,000
Mult.: 3,000

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 4 A 3 Ohms - 30 V, 30 V 3 V 19 nC - 55 C + 150 C 90 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in an IPAK package Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 1.05 kV 4 A 2 Ohms - 30 V, 30 V 3 V 17 nC - 55 C + 150 C 110 W Enhancement SuperMESH

STMicroelectronics MOSFETs N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 Lead-Time 20 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 18.5 A 299 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 250 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N Ch 500V 0.98 OHM 5.6A Non-Stocked Lead-Time 15 Weeks
Min.: 2,500
Mult.: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 5.6 A 1.2 Ohms - 30 V, 30 V 4.5 V 24.6 nC - 55 C + 150 C 90 W Enhancement SuperMESH
STMicroelectronics MOSFETs N-Ch 600 Volt 2.4 A Zener SuperMESH Non-Stocked Lead-Time 52 Weeks
Min.: 2,000
Mult.: 1,000
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 2.4 A 3.6 Ohms - 30 V, 30 V - 55 C + 150 C 45 W Enhancement SuperMESH Reel
STMicroelectronics MOSFETs N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS Non-Stocked Lead-Time 52 Weeks
Min.: 2,500
Mult.: 2,500
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 2.5 A 2.5 Ohms - 30 V, 30 V 3.75 V 17 nC 45 W SuperMESH Reel
STMicroelectronics MOSFETs N-Ch, 600V-1.76ohms Zener SuperMESH 4A Non-Stocked Lead-Time 15 Weeks
Min.: 2,000
Mult.: 1,000

Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 4 A 2 Ohms - 30 V, 30 V 3 V 26 nC - 55 C + 150 C 70 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch, 600V-4.4ohms Zener SuperMESH 2A Non-Stocked Lead-Time 15 Weeks
Min.: 3,000
Mult.: 3,000

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 2 A 4.8 Ohms - 30 V, 30 V 3.75 V 11 nC - 55 C + 150 C 45 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Channel 400V to 650V Non-Stocked Lead-Time 15 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 10 A 750 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 35 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 800 V, 0.65 Ohm typ., 10.5 A SuperMESH Power MOSFET in a TO-220 packag Non-Stocked Lead-Time 15 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10.5 A 750 mOhms - 30 V, 30 V 3 V 87 nC - 55 C + 150 C 190 W Enhancement SuperMESH
STMicroelectronics MOSFETs N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM) Non-Stocked Lead-Time 16 Weeks
Min.: 600
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.05 kV 1.4 A 8 Ohms - 30 V, 30 V 3 V 13 nC - 55 C + 150 C 20 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in a TO-3PF package Non-Stocked Lead-Time 16 Weeks
Min.: 900
Mult.: 300

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.05 kV 2 A 6 Ohms - 30 V, 30 V 3 V 10 nC - 55 C + 150 C 30 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-channel 400 V, 4.5 Ohm typ., 0.43 A SuperMESH(TM) Power MOSFET in a PowerFLAT Non-Stocked Lead-Time 15 Weeks
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT PowerFLAT-5x5-12 N-Channel 1 Channel 400 V 430 mA 4.5 Ohms - 20 V, 20 V 800 mV 13 nC - 55 C + 150 C 2.5 W Enhancement SuperMESH Reel
STMicroelectronics MOSFETs N-channel 500 V, 2.8 Ohm typ., 2.3 A SuperMESH Power MOSFET in a TO-220 package Non-Stocked Lead-Time 13 Weeks
Min.: 3,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 2.3 A 2.8 Ohms - 30 V, 30 V 3 V 15 nC - 55 C + 150 C 45 W Enhancement SuperMESH Tube
STMicroelectronics MOSFETs N-Ch, 600V-0.85ohms 7A Non-Stocked Lead-Time 15 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 950 mOhms - 30 V, 30 V 3.75 V 38 nC - 55 C + 150 C 30 W Enhancement SuperMESH Tube