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SIRC06DP-T1-GE3

Name: Vishay SIRC06DP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIRC06DP-T1-GE3
Price: 0.39 USD
Availability: OutOfStock

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Mouser No:

78-SIRC06DP-T1-GE3

Mfr. No:

SIRC06DP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs 30V Vds 20V Vgs PowerPAK SO-8

Datasheet:

SIRC06DP-T1-GE3 Datasheet

ECAD Model:

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More Information

Learn more about Vishay Semiconductors SIRC06DP-T1-GE3

Availability

Stock:: Non-Stocked

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Factory Lead Time:: Request Delivery Quote

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Minimum: 6000 Multiples: 3000

Unit Price:

$-.--

Ext. Price:

$-.--

Est. Tariff:

This Product Ships FREE

Pricing (USD)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 3000)
	$0.391	$2,346.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	4 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	38.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Tradename:	TrenchFET, PowerPAK
Packaging:	Reel
Brand:	Vishay Semiconductors
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	8 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	SIR
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	506.600 mg

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Datasheet

SIRC06DP-T1-GE3 Datasheet

Models

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

SkyFET® Power MOSFETs

Vishay / Siliconix SkyFET® Power MOSFETs integrate a MOSFET and a Schottky diode and are ideal for increasing efficiency at light loads and higher frequencies to reduce power losses in servers, notebooks, and VRMs. Their low V_F and Q_rr provide an advantage over standard trench MOSFETs. Other features include increased efficiency for DC-DC converter applications, reduced space by eliminating external Schottky diodes, low-side switch for synchronous rectification, and reduced power losses linked to the body diode of the MOSFET. Typical applications for Vishay / Siliconix SkyFET Power MOSFETs include point of load (PoL), synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.