IXYS IXTK200N10 Series MOSFETs

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs L2 Linear Power MOSFET
Datasheet
119In Stock
1,525On Order
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 200 A 11 mOhms - 20 V, 20 V 2 V 540 nC - 55 C + 150 C 1.04 kW Enhancement Linear L2 Tube
IXYS MOSFETs 200 Amps 100V 0.0075 Rds
Datasheet
673In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 200 A 7.5 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 800 W Enhancement PolarHT Tube