HyperFET MOSFETs

Results: 116
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs 170 Amps 100V Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 100 V 170 A 10 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 20 Amps 1200 V 0.75 Ohms Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 20 A 750 mOhms - 30 V, 30 V - 55 C + 150 C 780 W Enhancement HyperFET Tube
IXYS MOSFETs 1KV 24A Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 24 A 390 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 24 Amps 900V 0.45 Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 24 A 450 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 25 Amps 900V 0.33 Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 25 A 330 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 26 Amps 900V 0.3 Rds Non-Stocked
Min.: 300
Mult.: 300

Si Through Hole TO-264-3 N-Channel 1 Channel 900 V 26 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 800V 27A Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 27 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 30 Amps 1000V 0.35 Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 30 A 400 mOhms - 30 V, 30 V - 55 C + 150 C 735 W Enhancement HyperFET Tube
IXYS MOSFETs 32 Amps 600V Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 32 A 250 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 800V 34A Non-Stocked
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 34 A 240 mOhms - 20 V, 20 V 5 V 270 nC - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 600V 36A Non-Stocked
Min.: 50
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 36 A 180 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 50 Amps 500V 0.1 Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 50 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 52 Amps 600V 0.12 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 52 A 115 mOhms - 30 V, 30 V - 55 C + 150 C 735 W Enhancement HyperFET Tube
IXYS MOSFETs 500V 55A Non-Stocked Lead-Time 42 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 55 A 90 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 60 Amps 550V 0.09 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 550 V 60 A 88 mOhms - 30 V, 30 V 4.5 V 200 nC - 55 C + 150 C 735 W Enhancement HyperFET Tube
IXYS MOSFETs 73 Amps 300V 0.042 Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 73 A 45 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 80 Amps 150V 0.0225 Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 150 V 80 A 22.5 mOhms - 20 V, 20 V - 55 C + 150 C 360 W Enhancement HyperFET Tube
IXYS MOSFETs 88 Amps 200V 0.028W Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 88 A 30 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 90 Amps 300V 0.033 Rds Non-Stocked Lead-Time 39 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 90 A 33 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube
IXYS MOSFETs 34 Amps 1000V 0.28W Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 30 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 550 W Enhancement HyperFET Tube
IXYS MOSFETs 44 Amps 600V 0.13W Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 41 A 130 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs 44 Amps 800V 0.165W Rds Non-Stocked
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 44 A 165 mOhms - 20 V, 20 V - 55 C + 150 C 550 W Enhancement HyperFET Tube
IXYS MOSFETs 70 Amps 600V Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 37 A 92 mOhms - 30 V, 30 V - 55 C + 150 C 360 W Enhancement HyperFET Tube
IXYS MOSFETs 3.6 Amps 800V 3.6 Rds Non-Stocked
Min.: 50
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 3.6 A 3.6 Ohms - 20 V, 20 V - 55 C + 150 C 100 W Enhancement HyperFET Tube

IXYS MOSFETs 87 Amps 250V 0.027 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 87 A 27 mOhms - 20 V, 20 V - 55 C + 150 C 400 W Enhancement HyperFET Tube