HyperFET MOSFETs

Results: 116
Select Image Part # Mfr. Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging

IXYS MOSFETs 200V 120A Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 120 A 17 mOhms - 20 V, 20 V 4 V 300 nC - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 120 Amps 250V 0.022 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 22 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 150 Amps 150V 0.0125 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 150 A 12.5 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 180 Amps 85V 0.007 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 85 V 180 A 7 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 24 Amps 900V 0.45 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 24 A 450 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 25 Amps 900V 0.33 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 25 A 330 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 26 Amps 900V 0.3 Rds Non-Stocked Lead-Time 32 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 26 A 300 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 44 Amps 500V 0.12 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 44 A 120 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 50 Amps 500V 0.1 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 50 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 520 W Enhancement HyperFET Tube

IXYS MOSFETs 52 Amps 600V 0.12 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 52 A 115 mOhms - 30 V, 30 V - 55 C + 150 C 735 W Enhancement HyperFET Tube

IXYS MOSFETs 60 Amps 550V 0.09 Rds Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 550 V 60 A 88 mOhms - 30 V, 30 V - 55 C + 150 C 735 W Enhancement HyperFET Tube

IXYS MOSFETs 62 Amps 250V 0.035 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 62 A 35 mOhms - 20 V, 20 V - 55 C + 150 C 390 W Enhancement HyperFET Tube

IXYS MOSFETs 73 Amps 300V 0.042 Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 73 A 45 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 88 Amps 200V 0.022W Rds Non-Stocked
Min.: 30
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 88 A 30 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HyperFET Tube

IXYS MOSFETs 300V 90A Non-Stocked
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 90 A 33 mOhms - 20 V, 20 V 4 V 360 nC - 55 C + 150 C 560 W Enhancement HyperFET Tube

IXYS MOSFETs 500V 55A Non-Stocked

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 55 A 80 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HyperFET Tube