IXFN420N10T

IXYS
747-IXFN420N10T
IXFN420N10T

Mfr.:

Description:
MOSFET Modules TRENCH HIPERFET PWR MOSFET 100V 420A

ECAD Model:
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In Stock: 361

Stock:
361 Can Dispatch Immediately
Factory Lead Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$32.12 $32.12
$27.26 $272.60
$23.89 $2,389.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
100 V
420 A
2.3 mOhms
- 20 V, + 20 V
2.5 V
- 55 C
+ 175 C
1.07 mW
IXFN420N10
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 255 ns
Product Type: MOSFET Modules
Rise Time: 155 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: GigaMos Trench HiperFet Power MOSFET
Typical Turn-Off Delay Time: 115 ns
Typical Turn-On Delay Time: 47 ns
Unit Weight: 30 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.