STGW60H65DFB-4

STMicroelectronics
511-STGW60H65DFB-4
STGW60H65DFB-4

Mfr.:

Description:
IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Complete Your Design

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
15 Weeks Estimated factory production time.
Minimum: 600   Multiples: 600
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:
This Product Ships FREE

Pricing (USD)

Qty. Unit Price
Ext. Price
$3.53 $2,118.00
$3.52 $4,224.00

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
TO-247-4
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
80 A
283 W
- 55 C
+ 175 C
STGW60H65DFB-4
Tube
Brand: STMicroelectronics
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: Not Available
Gate-Emitter Leakage Current: 250 uA
Product Type: IGBT Transistors
Factory Pack Quantity: 600
Subcategory: IGBTs
Unit Weight: 4.430 g
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Attributes selected: 0

Datasheet

PCN

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290095
JPHTS:
8541290100
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

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