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STI47N60DM6AG

Name: STMicroelectronics STI47N60DM6AG
Brand: STMicroelectronics
SKU: 511-STI47N60DM6AG
Price: 6.9 USD
Availability: InStock

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Mouser No:

511-STI47N60DM6AG

Mfr. No:

STI47N60DM6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in

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Datasheet:

STI47N60DM6AG Datasheet (PDF)

ECAD Model:

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In Stock: 21

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$6.90	$6.90
	$5.01	$50.10
	$3.32	$332.00
	$3.18	$1,590.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	I2PAK-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	36 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4.75 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	STI47N60DM6AG
Factory Pack Quantity:	1000
Subcategory:	Transistors

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Datasheet

STI47N60DM6AG Datasheet (PDF)

EOL

Product Change Notification (PDF)

PCN

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.